国際会議Proceedings - 植杉　克弘

1. Annealing dependence on flexible p-CuGaO2/n-ZnO heterojunction diode deposited by RF sputtering method

   Mui Li Lam, Muhammad Hafiz Abu Bakar, Wai Yip Lam, Afishah Alias, Abu Bakar Abd Rahman, Khairul Anuar Mohamad, Katsuhiro Uesugi，EPJ Web of Conferences，162巻，Article Number:01061，2017年11月

   

2. Annealing Dependence on Structural and Electrical Characteristic of n-ZnO/p-CuGaO2 Transparent Heterojunction Diode

   11. MH. Abu Bakar, LM. Li, KA. Mohamad, FM. Yassin, CF. Pien, A. Alias, and K. Uesugi，ADVANCED SCIENCE LETTERS，23巻，11号，(頁 11564 ～ 11566)，2017年11月

   

3. Fabrication and characterization of 6, 13-bis (triisopropylsilylethynyl)-pentacene active semiconductor thin films prepared by flow-coating method

   Khairul Anuar Mohamad, Fara Naila Rusnan, Dzulfahmi Mohd Husin Seria, IsmailSaad, Afishah Alias, Uesugi Katsuhiro, Fukuda Hisashi，AIP Conf. Proc.，(頁 020003 ～ )，2015年08月，Negeri Sembilan

   

4. Electrical and structural characterization of Zn doped CuGaO2 films

   Afishah Alias, Khairul Anuar Mohamad, Katsuhiro Uesugi, Hiroshi Fukuda，2013 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)，(頁 183 ～ 185)，2013年09月

   

5. Effect of [6, 6]-Phenyl-C 61 butyric acid methyl ester (PCBM) agglomerated nanostructure on device performance in organic thin-film transistors

   Khairul Anuar Mohamad, Afishah Alias, Ismail Saad, Bablu Gosh, Katsuhiro Uesugi, Hiroshi Fukuda，2013 IEEE RegionalSymposium on Microand Nanoelectronics (RSM)，(頁 179 ～ 182)，2013年09月

   

6. Fabrication of CuGaO2 films by sol-gel method for UV detectorapplication

   Alias, A., Mohamad, K.A., Gosh, B.K., Sakamoto, M., Uesugi, K.，10th IEEE International Conferenceon Semiconductor Electronics，(頁 763 ～ 765)，2012年09月，Kuala Lumpur

   

7. Organic field-effect transistors for nonvolatile memory devices using charge-acceptor layers

   Mohamad, K.A., Alias, A., Saad, I., Gosh, B.K., Uesugi, K., Fukuda, H.，10th IEEE International Conference on Semiconductor Electronics，(頁 750 ～ 754)，2012年09月

   

8. Growth of CuO and CuGaO 2 thin films by spin-coating method

   Alias, A., Sakamoto, M., Uesugi, K.，Materials Research Society Symposium Proceedings，1315巻，(頁 35 ～ 38)，2012年04月

   

9. All-polymer organic field-effect transistors with memory element

   Mohamad, K.A.,Alias, A., Saad, I., Uesugi, K., Fukuda, H.，Proceedings - 3rd International Conference on Intelligent Systems Modelling and Simulation, ISMS 2012，(頁 743 ～ 746)，2012年02月

   

10. Optical responses and optically program-electrically erase memory in organic transistors

    Mohamad, K.A., Saad, I., Uesugi, K., Fukuda, H.，Conference Proceedings - 2011 IEEE 2nd International Conference on Photonics, ICP 2011，(頁 6106825 ～ )，2011年10月

    

11. Organic thin film transistor memories with carbon nanodots fabricated by focused ion beam chemical vapor deposition

    Rahim, R.A., Hashim, U., Fukuda, H., Tada, Y., Wainai, N., Uesugi, K., Shimoyama, Y.，AIP Conference Proceedings，1136巻，(頁 297 ～ 301)，2009年06月

    

12. Surface Passivation Effect of Electron-Beam Resist on InAs Quantum Dots and Their Improved Luminescence Efficiency

    Idutsu, Y.; Hayashi, Y.; Endo, M.; Uesugi, K.; Suemune, I.，IEEE 19th International Conference on Indium Phosphide&Related Materials，(頁 285 ～ 288)，2007年05月，Matsue

    

13. Growth Process of GaAs Cap Layers on GaSb/GaAs Quantum Dot Surfaces

    Uesugi, K.; Sato, M.; Idutsu, Y.; Suemune, I.，IEEE 19th International Conference on Indium Phosphide&Related Materials，(頁 462 ～ 465)，2007年05月，Matsue

    

14. Strain-compensation of inas quantum dots: dot size dependence

    Zhang, Wei; Uesugi, Katsuhiro; Matsumura, N.; Suemune, Ikuo，International Conference on Quantum Electronics&the Pacific Rim Conference on Lasers&Electro Optics，(頁 133 ～ 134)，2005年07月，Tokyo

    

15. Optical properties of GaAsNSe/GaAs superlattice investigated by means of piezoelectric photothermal spectroscopy for nonradiative electron transitions

    Sakai, K.; Fukushima, S.; Fukuyama, A.; Uesugi, K.; Suemune, I.; Ikari, T.，IEE Proceedings - Optoelectronics，151巻，(頁 328 ～ 330)，2004年05月

    

16. Improved luminescence efficiency of InAs quantum dots by nitrogen-induced strain compensation with GaNAs burying layers

    Suemune, I.; Ganapathy, S.; Kumano, H.; Uesugi, K.，2004 International Conference on Indium Phosphide and Related Materials，(頁 636 ～ 639)，2004年05月，Kagoshima

    

17. MOMBE growth of III-V-N-based quantum wells and quantum dots emitting above 1.3μm

    Suemune, I.; Uesugi, K.; Sasikala, G.; Kurimoto, M.; Zhou, W.; Thilakan, P，The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society，(頁 943 ～ 944)，2003年10月，Arizona

    

18. III-V-N-related quantum structures for 1.5 μm emission

    Suemune, I.; Uesugi, K.; Ganapathy, S.; Zhang, X.Q.; Kurimoto, M.; Kim, B.J.; Seong, T.-Y.; Machida, H.; Shimoyama, N.，IEE Proceedings - Optoelectronics，150巻，(頁 52 ～ 55)，2003年02月

    

19. InAs-quantum-dots-based light emitting diodes with GaNAs strain-compensating layers

    Kurimoto, M.; Ganapathy, S.; Zhang, X.Q.; Uesugi, K.; Kumano, H.; Suemune, I.，IEEE 18th International Semiconductor Laser Conference，(頁 151 ～ 152)，2002年09月，Germany

    

20. Effect of GaNAs strain compensating layer over InAs quantum dots grown by MOMBE

    Ganapathy, Sasikala; Zhang, X.Q.; Uesugi, K.; Kumano, H.; Suemune, I.; Kim, B.J.; Seong, T.-Y.，14th Indium Phosphide and Related MaterialsConference，(頁 557 ～ 560)，2002年05月，Sweden